Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper
نویسندگان
چکیده
K. V. Rajani a *, S. Daniels, E. McGlynn, R. P. Gandhiraman, R. Groarke and P. J. McNally School of Electronic Engineering and NCPST, Dublin City University, Dublin 9, Ireland School of Physical Sciences and NCPST, Dublin City University, Dublin 9, Ireland BDI, Dublin City University, Dublin 9, Ireland School of Chemical Sciences, Dublin City University, Dublin 9, Ireland School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
منابع مشابه
Oxidation kinetics of nanoscale copper films studied by terahertz transmission spectroscopy
Terahertz (THz) transmission spectroscopy is used to measure the oxidation kinetics of copper thin films evaporated on silicon substrates. The transmission of broadband THz pulses from 1 to 7 THz through the copper film is measured while it gets oxidized at an elevated temperature in ambient air. The change in the transmitted THz electric field is correlated with the growth of the cuprous oxide...
متن کاملStructural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing
Articles you may be interested in Functional properties of ZnO films prepared by thermal oxidation of metallic films Structural and optical properties of Ba x Sr 1 x Ti O 3 thin films on indium tin oxide/quartz substrates prepared by radio-frequency magnetron sputtering Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate Structural and optic...
متن کاملCopper and Copper Oxide Thin Films Obtained by Metalorganic Microwave Plasma Cvd
Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) is an innovative technique allowing the direct preparation, at low temperature, of different valence states of copper (Cu°, Cu, Cu). The precursor used is a volatile metalorganic one (copper acetylacetonate) with helium as a carrier gas. The precursor is then transported in a remote plasma of Ar, A1/O2 or A r / ^ O gas at low pressure...
متن کاملGrowth and Characterization of Thin MoS2 Films by Low- Temperature Chemical Bath Deposition Method
Transition metal dichalcogenide (TMDC) materials are very important inelectronic and optical integrated circuits and their growth is of great importance in thisfield. In this paper we present growth and fabrication of MoS2 (Molibdan DiSulfide)thin films by chemical bath method (CBD). The CBD method of growth makes itpossible to simply grow large area scale of the thin la...
متن کاملLow temperature formation Silver-Copper alloy nanoparticles using hydrogen plasma treatment for fabrication of humidity sensor
In this paper, a novel method of producing bi-metallic alloy nanoparticles at low temperatures using hydrogen bombardment of thin films, deposited on glass substrates, is introduced. Optical and morphological characteristics of the nanoparticles were extensively studied for various conditions of plasma treatment, such as plasma power density, temperature, duration of hydrogen bombardment, thick...
متن کامل